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INTEGRATED CIRCUITS
DATA SHEET
TZA3050 30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
Product specification Supersedes data of 2002 Nov 06 2003 Mar 26
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
CONTENTS 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 8 9 FEATURES General Control Protection APPLICATIONS GENERAL DESCRIPTION ORDERING INFORMATION BLOCK DIAGRAM PINNING FUNCTIONAL DESCRIPTION Data and clock input Retiming Pulse width adjustment Modulator output stage Average loop control Direct current setting Soft start Burst mode Alarm functions Enable Reference block LIMITING VALUES THERMAL CHARACTERISTICS 10 11 12 12.1 12.1.1 12.1.2 12.1.3 12.1.4 12.1.5 12.2 12.3 13 14 14.1 14.2 14.3 14.4 14.5 15 16 17 DC CHARACTERISTICS AC CHARACTERISTICS
TZA3050
APPLICATION INFORMATION Design equations Bias and modulation currents Average monitor current Alarm operating current Alarm monitor current Pulse width adjustment Burst mode application Average loop control PACKAGE OUTLINE SOLDERING Introduction to soldering surface mount packages Reflow soldering Wave soldering Manual soldering Suitability of surface mount IC packages for wave and reflow soldering methods DATA SHEET STATUS DEFINITIONS DISCLAIMERS
2003 Mar 26
2
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
1 1.1 FEATURES General 1.3 Protection
TZA3050
* Alarm function on operating current * Alarm function on monitor current * Soft start-up on bias and modulation currents during power-up. 2 APPLICATIONS
* Burst mode laser driver from 30 Mbits/s to 1.25 Gbits/s * Bias current from 10 mA up to 100 mA * Modulation current from 6 mA up to 100 mA * Switch on and off time for bias and modulation currents below 100 ns * Integrated burst mode switching and memory circuit * Rise and fall times typical 120 ps * Jitter below 30 ps peak-to-peak value * Retiming function via external clock with disable option * Pulse width adjustment function with disable option * Positive Emitter Coupled Logic (PECL), Low Voltage Emitter Coupled Logic (LVPECL) and Current Mode Logic (CML) compatible data and clock inputs * Internal common mode voltage available for AC-coupled data and clock inputs and for single-ended applications * 3.3 V supply voltage * DC-coupled laser for 3.3 and 5 V laser supply. 1.2 Control
* Burst mode laser driver. 3 GENERAL DESCRIPTION
The TZA3050 is a fully integrated laser driver for burst mode optical transmission systems with data rates up to 1.25 Gbits/s. The TZA3050 incorporates all necessary control and protection functions for a laser driver application with very few external components required and low power dissipation. The average-loop controls the average monitor current in a typical programmable range from 150 to 1300 A. The average-loop settings are memorized internally between bursts of data. The bias and modulation currents have a fast switch on and off time of less than 100 ns. The design is made in the Philips BiCMOS RF process and is available in a HBCC32 package. The TZA3050 is intended for use in an application with a DC-coupled laser diode for both 3.3 and 5 V laser supply voltages. The BIAS output is optimized for low voltage requirements giving a minimum of 1.25 V for 3.3 and 5 V laser supplies.
* Average power loop control * Optional direct setting of bias current * Direct setting of modulation current.
4
ORDERING INFORMATION TYPE NUMBER PACKAGE NAME HBCC32 DESCRIPTION plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm VERSION SOT560-1
TZA3050VH
2003 Mar 26
3
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
5 BLOCK DIAGRAM
TZA3050
handbook, full pagewidth
AVR 32
i.c.
CBIAS 30
MODIN 29
BIASOUT 28
BIASIN 27
MON 26 25 IBIAS V/I VCCO BIAS
31
VCCA VCCD
1
100 A
100 A
24
2
CURRENT CONVERSION IAVR
100 mA/V
enable burst V/I 23 GND
100 mA/V CONTROL BLOCK Iref enable burst 100 100 22 21 20 20 k DINQ TEST CIN 4 5 6 20 k CINQ GND 7 8 20 k VCCD - 1.32 V 10 k 100 20 k D FF C disable retiming: VCIN, VCINQ < 0.3 V 17 PWA 100 MUX PRE AMP POST AMP 19
IMON
LA LA LAQ LAQ
DIN
3 PULSE WIDTH ADJUST
18 Imod
GND
TZA3050
ALRESET
9 1.4 V
IBIAS /750
Iav(MON)/12.5 ALARM OPERATING CURRENT R ALARM MONITOR CURRENT R V AND I REFERENCE Q
3.3 V 20 k
Imod/1500
+
enable burst
Q
1.4 V
10 ENABLE
11 ALOP
12 ALMON
13 MAXOP
14
15
16
MCE158
VTEMP MAXMON RREF
Fig.1 Block diagram.
2003 Mar 26
4
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
6 PINNING SYMBOL GND VCCA VCCD DIN DINQ TEST CIN CINQ GND ALRESET ENABLE ALOP ALMON MAXOP VTEMP MAXMON RREF PWA GND LAQ LAQ LA LA GND BIAS VCCO MON BIASIN BIASOUT MODIN CBIAS i.c. AVR PIN die pad 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 analog supply voltage digital supply voltage non-inverted data input (RF input) inverted data input (RF input) test pin; must be connected to ground non-inverted clock input (RF input) inverted clock input (RF input) ground alarm reset input for alarm outputs ALMON and ALOP DESCRIPTION
TZA3050
common ground plane for VCCA, VCCD, VCCO, RF and I/O; must be connected to ground
enable input for modulation and bias current switch on and off between bursts alarm output on operating current (open-drain) alarm output on monitor diode current (open-drain) threshold level input for alarm on operating current temperature dependent voltage output threshold level input for alarm on monitor diode current reference current input; must be connected to ground with an accurate (1%) 10 k resistor pulse width adjustment input ground inverted laser modulation output (RF output); output for dummy load inverted laser modulation output (RF output); output for dummy load non-inverted laser modulation output (RF output); output for laser non-inverted laser modulation output (RF output); output for laser ground current source output for the laser bias current supply voltage for the output stage and the laser diode input from the monitor photodiode (RF input) input for the bias current setting output of the control block for the bias current input for the modulation current setting output of the average loop; must be connected via a 100 nF external capacitor to GND internally connected input for the optical average power level setting
2003 Mar 26
5
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
TZA3050
handbook, full pagewidth
BIASOUT
MODIN
BIASIN
CBIAS
VCCA VCCD DIN DINQ TEST CIN CINQ GND
1 2 3 4 5 6 7 8 9 ALRESET
32
31
30
29
28
27
26
25 24 23 22 BIAS GND LA LA LAQ LAQ GND PWA
TZA3050VH
21 20 19 18
10 ENABLE
11 ALOP
12 ALMON
13 MAXOP
14 VTEMP
15 MAXMON
16 RREF
17
VCCO
MCE135
Fig.2 Pin configuration.
7 7.1
FUNCTIONAL DESCRIPTION Data and clock input
7.3
Pulse width adjustment
The TZA3050 operates with differential Positive Emitter Coupled Logic (PECL), Low Voltage Positive Emitter Coupled Logic (LVPECL) and Current-Mode Logic (CML) data and clock inputs with a voltage swing from 100 mV to 1 V (p-p). It is assumed that both data and clock inputs carry a complementary signal with the specified peak-to-peak value (true differential excitation). The circuit generates an internal common mode voltage for AC-coupled data inputs, clock inputs and single-ended applications. If VDIN > VDINQ, the modulation current is sunk by pin LA and corresponds to an optical `one` level of the laser. 7.2 Retiming
The on-duration of the laser current can be adjusted with a guaranteed range from -50 to +50 ps. The adjustment time is set by connecting a resistor, RPWA, to pin PWA. The maximum allowable capacitive load on pin PWA is 100 pF. Pulse width adjustment is disabled when pin PWA is short-circuited to ground. 7.4 Modulator output stage
The output stage is a high-speed bipolar differential pair with typical rise and fall times of 120 ps and with a modulation current source of up to 100 mA. The output stage of the TZA3050 is optimized for DC-coupled lasers. The modulation current switches between the LA and LAQ outputs. For a good RF performance the inactive branch carries a small amount of the modulation current. The LA output is optimized for the laser, the LAQ output is optimized for the dummy load. The BIAS output is optimized for low voltage requirements (1.25 V minimum).
The retiming function synchronizes the data with the clock to improve the jitter performance. The data latch switches on the rising edge of the clock input. The retiming function is disabled when both clock inputs are below 0.3 V. At start-up the initial polarity of the laser is unknown until the first rising edge of the clock input appears.
2003 Mar 26
6
MON
AVR
i.c.
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
7.5 Average loop control 7.9 Alarm functions
TZA3050
The average power control loop maintains a constant average power level of the monitor current over temperature and lifetime of the laser. The average monitor current is programmable over a wide current range, from 150 to 1300 A typical, by tuning the setting resistor RAVR. The maximum allowable capacitive load on pins AVR and BIASOUT is 100 pF. 7.6 Direct current setting
The TZA3050 features two alarm functions for the detection of excessive laser operating current and monitor diode current due to laser ageing, laser malfunctioning or a high laser temperature. The alarm threshold levels are programmed by a resistor or a current source. The operating current equals the bias current plus half of the modulation current. 7.10 Enable
The TZA3050 can also operate in open-loop mode with direct setting of the bias and modulation currents. The bias and modulation current sources are transconductance amplifiers and the output currents are determined by the BIASIN and MODIN voltages respectively. The bias current source has a bipolar output stage with minimum output capacitance for optimum RF performance. 7.7 Soft start
A LOW level on the enable input disables the bias and modulation current sources: the laser is off. A HIGH level on the enable input or an open enable input switches both current sources on: the laser is operational. 7.11 Reference block
At power-up the bias and modulation current sources are released when VCCA > 2.7 V, the reference voltage has reached the correct value of 1.2 V and the voltage on pin ENABLE is HIGH. The control loop starts with minimum bias and modulation current at power-up provided the device is enabled. The current levels increase until the input current on pin MON matches the programmed average level. 7.8 Burst mode
The reference voltage is derived from a band gap circuit and is available at pin RREF. An accurate (1%) 10 k resistor has to be connected to pin RREF to provide the internal reference current. The maximum allowable capacitive load on pin RREF is 100 pF. The reference voltage on the setting pins MAXOP, MAXMON, PWA and AVR is buffered and derived from the band gap voltage. The output voltage on pin VTEMP reflects the junction temperature of the TZA3050. The temperature coefficient of VVTEMP equals -2.2 mV/K.
The TZA3050 is compliant with burst mode application. Fast switch on and off of bias and modulation currents is allowed in less than 100 ns via pin ENABLE. When internal average loop control is used, the average power settings can be maintained between two bursts of data via an external capacitor on pin CBIAS. During a burst, this capacitor defines the time constant of the loop. Between bursts, the capacitor is automatically disconnected from the internal circuitry and is used as a memory cell. A more complex memory cell can also be connected to pin CBIAS.
2003 Mar 26
7
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
TZA3050
8 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referenced to ground; positive currents flow into the IC. SYMBOL VCCD VCCA VCCO Vo(LA) Vo(LAQ) VBIAS Vn PARAMETER digital supply voltage analog supply voltage RF output supply voltage output voltage at pin LA output voltage at pin LAQ bias voltage voltage on all other input and output pins analog inputs and outputs digital inputs and outputs In input current on pins MAXOP, MAXMON, RREF, PWA and AVR VTEMP and BIASOUT ALOP, ALMON and MON Tamb Tj Tstg ambient temperature junction temperature storage temperature -1.0 -1.0 0 -40 -40 -65 0 +1.0 5.0 +85 +125 +150 mA mA mA C C C -0.5 -0.5 VCCA + 0.5 VCCD + 0.5 V V 3.3 V laser supply 5 V laser supply VCCO = 3.3 V VCCO = 5 V VCCO = 3.3 V VCCO = 5 V VCCO = 3.3 V VCCO = 5 V CONDITION MIN. -0.5 -0.5 -0.5 -0.5 0.8 1.2 1.6 2.0 0.8 0.8 MAX. +3.5 +3.5 +3.5 +5.3 4.1 4.5 4.5 5.2 3.6 4.1 UNIT V V V V V V V V V V
9 THERMAL CHARACTERISTICS In compliance with JEDEC standards JESD51-5 and JESD51-7. SYMBOL Rth(j-a) PARAMETER CONDITIONS VALUE 35 UNIT K/W
thermal resistance from 4 layer Printed-circuit board in still air with junction to ambient 9 plated vias connected with the heatsink and the first ground plane in the PCB thermal resistance from HBCC32 die pad soldered to PCB junction to ambient
Rth(j-a)
60
K/W
2003 Mar 26
8
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
TZA3050
10 DC CHARACTERISTICS Tamb = -40 to +85 C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V; VCCO = 3.14 to 3.47 V; RAVR = 7.5 k; RMODIN = 6.2 k; RBIASIN = 6.8 k; RPWA = 10 k; RRREF = 10 k (1%); RMAXMON = 13 k; RMAXOP = 20 k; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies: pins VCCA, VCCD and VCCO VCCA VCCD VCCO ICCA ICCD ICCO analog supply voltage digital supply voltage RF output supply voltage analog supply current digital supply current RF output supply current pins LA and LAQ open-circuit; 3.3 and 5 V laser supply VBIAS = 3.3 V; Imod = 16 mA; IBIAS = 20 mA; note 1 excluding Io(LA), Io(LAQ) and IBIAS; PWA and retiming off Vi(DIN) = VCCD - 2 V to VCCD; Vi(CIN) = VCCD - 2 V to VCCD AC-coupled inputs note 2 3.3 V laser supply 5 V laser supply 3.14 3.14 3.14 4.75 - - - 3.3 3.3 3.3 5.0 40 45 20 3.47 3.47 3.47 5.25 55 60 30 V V V V mA mA mA
Ptot Pcore
total power dissipation core power dissipation
- -
412 264
- -
mW mW
Data and clock inputs: pins DIN and CIN Vi(p-p) Vint(cm) VIO Zi(dif) Zi(cm) Vi(CIN)(dis) input voltage swing (peak-to-peak value) internal common mode voltage input offset voltage differential input impedance common mode input impedance input voltage for disabled retiming VCIN = VCINQ 100 - -10 80 - - - VCCD - 1.32 0 100 10 - 1000 - +10 130 - 0.3 mV V mV k V
Monitor photodiode input: pin MON Vi(MON) Zi(MON) Iav(MON)(low) Iav(MON)(max) Iav(MON) Vref(AVR) input voltage input impedance Iav = 150 to 1300 A Iav = 150 to 1300 A 0.9 - - 1150 -10 1.14 1.1 27 - 1300 - 1.20 1.3 - 150 - +10 1.26 V A A % V
Setting for average loop control: pins MON and AVR low average monitor current IAVR > -250 A setting maximum average monitor current setting IAVR = -50 A
relative accuracy of average temperature and VCCA current on pin MON variations; IAVR = 550 A reference voltage on pin AVR IAVR = -250 to -15 A; CAVR < 100 pF 9
2003 Mar 26
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
SYMBOL Isink(AVR) PARAMETER current sink on pin AVR CONDITIONS MIN. -280 VBIASOUT = 0.5 to 1.5 V; CBIASOUT < 100 pF VBIASOUT = 0.5 to 1.5 V; CBIASOUT < 100 pF VBIASIN = 0.5 to 1.5 V; VBIAS = VCCO VBIASIN = 0.5 to 1.5 V VBIASIN = 1.8 V VBIASIN = 0 to 0.4 V VENABLE < 0.8 V - 200 - - - TYP.
TZA3050
MAX. -15 -200 -
UNIT A A A
Control loop bias output: pin BIASOUT Isource(BIASOUT) source current Isink(BIASOUT) sink current
Bias current source: pins BIASIN and BIAS gm(bias) Isource(BIASIN) IBIAS(max) IBIAS(min) IBIAS(dis) Vo(BIAS) gm(mod) Isource(MODIN) bias transconductance source current at pin BIASIN maximum bias current minimum bias current bias current at disable output voltage on pin BIAS 89 -110 100 - - 1.25 110 -100 - 0.2 - - 95 -100 131 -95 - 0.4 100 - 112 -95 mA/V A mA mA A V
Modulation current source: pin MODIN modulation transconductance source current at pin MODIN VMODIN = 0.5 to 1.5 V; VLA = VLAQ = VCCO VMODIN = 0.5 to 1.5 V 77 -110 mA/V A
Modulation current outputs: pins LA and LAQ Io(LA)(max)(on) Io(LA)(min)(on) Io(LA)(min)(off) Zo(LA), Zo(LAQ) Io(LA)(dis), Io(LAQ)(dis) Vo(LA)(min) maximum laser modulation output current at LA on minimum laser modulation output current at LA on minimum laser modulation output current at LA off output impedance LA and LAQ pins non-inverted and inverted laser modulation output current at disable minimum output voltage at pin LA VENABLE < 0.8 V VMODIN = 1.8 V; VLA = VCCO = 3.3 V; note 3 VMODIN = 0 to 0.4 V; VLA = VCCO = 3.3 V; note 3 VMODIN = 1.5 V; VLA = VCCO = 3.3 V; note 3 100 - - 80 - - 5 - 100 - - 6 2 130 200 mA mA mA A
VCCO = 3.3 V VCCO = 5 V bias and modulation currents disabled bias and modulation currents enabled
1.2 1.6 - 2.0 -
- - - - 20
- - 0.8 - -
V V
Enable function: pin ENABLE VIL VIH Rpu(int) LOW-level input voltage HIGH-level input voltage internal pull-up resistance V V k
2003 Mar 26
10
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
SYMBOL PARAMETER CONDITIONS - 2.0 - MIN. - - 10 TYP.
TZA3050
MAX.
UNIT
Alarm reset: pin ALRESET VIL VIH Rpd(int) LOW-level input voltage HIGH-level input voltage internal pull-down resistance IMAXOP = 10 to 200 A Ioper(alarm) = 7.5 to 150 mA no reset reset 0.8 - - V V k
Alarm operating current: pins MAXOP and ALOP Vref(MAXOP) NMAXOP VD(ALOP)L Vref(MAXMON) NMAXMON VD(ALMON)L VRREF VVTEMP TCVTEMP Isource(VTEMP) Isink(VTEMP) Notes 1. The total power dissipation Ptot is calculated with VBIAS = VCCO = 3.3 V and IBIAS = 20 mA. In the application VBIAS will be VCCO minus the laser diode voltage which results in a lower total power dissipation. 2. The specification of the offset voltage is guaranteed by design. 100 3. The relation between the sink current Io(LA) and the modulation current Imod is: l o(LA) = I mod x ------------------------------- where 100 + Z L ( LA ) ZL(LA) is the external load on pin LA. The voltage on pin MODIN programmes the modulation current Imod. This current is divided between ZL(LA) and the 100 internal resistor connected to pins LA. When the modulation current is programmed to 100 mA, a typical ZL(LA) of 25 will result in an Io(LA) current of 80 mA, while 20 mA flows via the internal resistor. This corresponds to a voltage swing of 2 V on the real application load. 4. VVTEMP = 1.31 + TCVTEMP x Tj and Tj = Tamb + Ptot x Rth(j-a). reference voltage on pin MAXOP ratio of Ioper(alarm) and IMAXOP 1.15 - 0 1.2 775 - 1.2 15 - 1.20 1.20 -2.2 - - 1.25 - 0.4 V V
drain voltage at active alarm IALOP = 500 A reference voltage on pin MAXMON ratio of IMON(alarm) and IMAXMON IMAXMON = 10 to 200 A IMON(alarm) = 150 to 3000 A
Alarm monitor current: pins MAXMON and ALMON 1.15 - 0 1.25 - 0.4 V V
drain voltage at active alarm IALMON = 500 A reference voltage temperature dependent voltage temperature coefficient of VVTEMP source current of pin VTEMP sink current of pin VTEMP RRREF = 10 k (1%); CRREF < 100 pF Tj = 25 C; CVTEMP < 2 nF; note 4 Tj = -25 to + 125 C; note 4
Reference block: pins RREF and VTEMP 1.15 1.14 - - 1 1.25 1.27 - -1 - V V mV/K mA mA
2003 Mar 26
11
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
TZA3050
11 AC CHARACTERISTICS Tamb = -40 to +85 C; Rth(j-a) = 35 K/W; Ptot = 420 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V; VCCO = 3.14 to 3.47 V; RAVR = 7.5 k; RMODIN = 6.2 k; RBIASIN = 6.8 k; RPWA = 10 k; RRREF = 10 k (1%); RMAXMON = 13 k; RMAXOP = 20 k; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified. SYMBOL RF path BR J(LA)(p-p) tr, tf tsu(D) th(D) to(en) bit rate jitter of pin LA output signal (peak-to-peak value) rise and fall time of voltage on pin LA data input set-up time data input hold time switch-on time at enable from 50% of enable to 90% of steady state typical bias and modulation current; note 1 from 50% of enable to 10% of steady state typical bias and modulation current; note 1 average loop control RL = 25 20% to 80%; RL = 25 ; Imod = 30 mA 0.03 - - 60 60 - - - 120 - - - 1.25 30 150 - - 100 Gbits/s ps ps ps ps ns PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
to(dis)
switch-off time at disable
-
-
100
ns
Current control tcint tburst(min) tidle(max) average loop time constant minimum burst time average loop control; CCBIAS = 100 nF ENABLE pin HIGH - 30 - 5 - - - - 8 ms s ms
maximum time between two ENABLE pin LOW bursts
Pulse width adjustment tPWA(min) tPWA tPWA(max) Note 1. The switch-on and switch-off time at enable and disable given are the absolute maximum values. They depend strongly on the following parameters: bias current, modulation current, bias inductance and laser supply voltage. More detailed information available upon request minimum pulse width adjustment on pins LA pulse width adjustment on pins LA maximum pulse width adjustment on pins LA RPWA = 6.7 k; CPWA < 100 pF RPWA = 10 k; CPWA < 100 pF RPWA = 20 k; CPWA < 100 pF - - 50 -100 0 100 -50 - - ps ps ps
2003 Mar 26
12
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
12 APPLICATION INFORMATION 12.1 12.1.1 Design equations BIAS AND MODULATION CURRENTS
handbook, halfpage
TZA3050
105 Imod = Io(LA) (mA)
The bias and modulation currents are determined by the voltages on pins BIASIN and MODIN. For average loop control the BIASIN voltage is applied by the BIASOUT pin and the MODIN voltage is applied by an external voltage source or an external resistor RMODIN. For direct setting of bias and modulation currents, the BIASIN and MODIN voltages have to be applied by external voltage sources or by external resistors RBIASIN and RMODIN connected to the BIASIN and MODIN pins: IBIAS = (RBIASIN x 100 A - 0.5 V) x gm(bias) [mA] Imod = (RMODIN x 100 A - 0.5 V) x gm(mod) + 5 [mA] The transconductance gm(mod) defines the relation between the voltage on pin MODIN and the modulation current. The bias and modulation current sources operate with an input voltage range from 0.5 to 1.5 V. The output current is at its minimum level for an input voltage below 0.4 V; see Figs 3 and 4. The graphs indicate the values with a load of 0 . When the load is not zero, the relation between Io(LA) and Imod is given in Table "DC characteristics" Note 3.
gm(mod) = 100 mA/V
5 0 0.5 VMODIN (V) 1.5
MGT891
I o(LA)(min)
LA current when LA output is on Vo(LA) = VCCO
Fig.4
Modulation current as a function of MODIN voltage.
12.1.2
AVERAGE MONITOR CURRENT
The bias and modulation current sources are temperature compensated and keep the adjusted current level stable over the temperature range. The bias and modulation currents increase with increasing resistor values for RBIASIN and RMODIN respectively; this allows resistor tuning to start at a minimum current level.
handbook, halfpage
100 I BIAS (mA) gm(bias) = 100 mA/V
The average monitor current Iav(MON) in average loop operation is determined by the source current of the AVR pin (IAVR). The current can be sunk by an external current source or by an external resistor, RAVR, connected to ground. The equation is: V AVR Iav(MON) = 1580 - 5.26 x IAVR = 1580 - 5.26 x ------------- [A] R AVR The average monitor current increases with decreasing IAVR or increasing RAVR; this allows resistor tuning of RAVR to start at minimum IAVR current level (see Fig.5).
0.5 VBIASIN (V) 1.5
MCE136
0.2 0
I BIAS(min)
The formula used to program AVR is valid for typical conditions; tuning is necessary to achieve absolute accuracy of the AVR value.
Fig.3 Bias current as function of BIASIN voltage.
2003 Mar 26
13
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
TZA3050
handbook, full pagewidth
I av(MON) (A) 1300
I av(MON) = 1580 - 5.26 x IAVR A
150 0
50
I AVR (A)
250
MCE137
Fig.5 Typical average monitor current as a function of IAVR.
12.1.3
ALARM OPERATING CURRENT
The operating current for the DC-coupled laser application equals the bias current plus half of the modulation current: I oper I mod = I BIAS + --------2
V MAXMON I MON(alarm) = N MAXMON x -----------------------R MAXMON As the detected IMON is an average current, the alarm threshold is a function of the burst mode timing. The formula can be used as a reference for a mode where signal is always present. 12.1.5 PULSE WIDTH ADJUSTMENT
The alarm threshold Ioper(alarm) on the operating current is determined by the source current of the MAXOP pin. The current range for IMAXOP is from 10 to 200 A which corresponds with an Ioper(alarm) from 7.5 to 150 mA. The IMAXOP current can be sunk by an external current source or by connecting RMAXOP to ground: I oper(alarm) V MAXOP = N MAXOP x -------------------R MAXOP
The pulse width adjustment time is determined by resistor RPWA: R PWA - 10 k t PWA = 200 x ------------------------------------ [ps] R PWA The tPWA typical range is from -100 to +100 ps, which corresponds with an RPWA resistance ranging from 6.7 k minimum to 20 k maximum (see Fig.6). The PWA function is disabled when the PWA input is short-circuited to ground, the tPWA is 0 ps for a disabled PWA function.
The detection level is independent from burst mode timing. 12.1.4 ALARM MONITOR CURRENT
The alarm threshold IMON(alarm) on the monitor current is determined by the source current of the MAXMON pin. The current range for IMAXMON is from 10 to 200 A, which corresponds with an IMON(alarm) from 150 to 3000 A. The IMAXMON current can be sunk by an external current source or by connecting RMAXMON to ground: 2003 Mar 26 14
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
TZA3050
handbook, halfpage
100 t PWA (ps) 6.7 10 R PWA (k) 20
0
-100
MGT893
Fig.6 Typical pulse width adjustment.
12.2
Burst mode application
Table 1
Typical time constant of the average loop TIME CONSTANT (TYP.) <1 ms 5 ms 30 ms
In burst mode application, data flow is not constant, data (the `burst`) is interrupted with significant idle times when no data is present and the laser is shut-down. When using average loop control, the control is only done during a burst of data and the average value should be stored during idle time. The TZA3050 requires only one external capacitor to perform this storage. A typical 100 nF lossless capacitor connected to pin CBIAS will define the time constant of the loop during bursts (typical 5 ms) and will also define the accuracy of the value stored between bursts. Tuning of the external capacitor allows tuning of the average loop time constant depending on the duty cycle and the burst duration. When pin ENABLE is LOW, an internal switch is opened and the external capacitor is connected to a high-impedance point. When pin ENABLE is HIGH, the internal switch is closed and the external capacitor is connected to the internal average loop control circuit. The ENABLE pin also controls the on and off switch state of the bias and modulation current output stages resulting in burst-to-idle and idle-to-burst times below 100 ns on the full current range available, with a typical load of 25 on pins LA and LAQ. It is not recommended to use the TZA3050 without an external capacitor on pin CBIAS as this would result in a too small time constant, with the risk of pattern dependent behaviour. Table 1 shows time constants for different CBIAS capacitors.
CAPACITOR CCBIAS 10 nF 100 nF 470 nF
Using a smaller CBIAS capacitor allows a faster loop recovery in short burst period applications, but it also means a shorter storage period. A 100 nF is considered as a convenient value, even in applications with short burst time (minimum 30 s), and large idle time (maximum 8 ms) applications as shown in Fig.7.
handbook, halfpage
Enable burst > 30 s
MCE138
idle < 8 ms
Fig.7 Timing between burst and idle mode.
At power-up, the memorized value on pin CBIAS is reset by connecting pin CBIAS internally to ground. The timing in Fig.7 does not take into account the initial charging of the storage circuit. This initial timing is directly proportional to the value of the CBIAS capacitor and to the duty cycle settings of the application.
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Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
12.3 Average loop control
TZA3050
A simplified application using the TZA3050 with average loop control and a DC-coupled laser at 3.3 or 5 V laser voltage is illustrated in Fig.8. The average power level is determined by the resistor RAVR. The average loop controls the bias current with the BIASOUT output connected to the BIASIN input. The modulation current is determined by the MODIN input voltage, which is generated by the resistor RMODIN and the 100 A source current of the MODIN pin. The average loop setting is maintained between bursts with a capacitor connected to pin CBIAS. When pin ENABLE is HIGH, the internal average loop regulates the average power. When pin ENABLE is LOW, an internal switch is opened and the previous average loop state is stored on the CBIAS capacitor.
handbook, full pagewidth
3.3 V or 5 V BIASOUT
MODIN
BIASIN
CBIAS
3.3 V 3.3 V
VCCA VCCD DIN DINQ TEST CIN CINQ GND
1 2 3 4 5 6 7 8 9
32
31
30
29
28
27
26
25 24 23 22 BIAS GND LA LA LAQ LAQ GND
TZA3050
21 20 19 18
ALRESET
10 ENABLE
11 ALOP
12 ALMON
13 MAXOP
14 VTEMP
15 MAXMON
16 RREF
17 PWA
VCCO
MON
laser with monitor diode
AVR
i.c.
MCE139
Fig.8 TZA3050 with DC-coupled laser and average loop control.
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16
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
13 PACKAGE OUTLINE HBCC32: plastic thermal enhanced bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm
TZA3050
SOT560-1
D
xB
b1
vMCAB wMC vMCAB wMC
ball A1 index area
b
E
b3 vMCAB wMC b2 detail X vMCAB wMC
xC B e C e1 vA
A y
e2
E1 e4
1 32 D1 e3 X A2 A 0 2.5 scale DIMENSIONS (mm are the original dimensions) UNIT mm A max. 0.8 A1 0.10 0.05 A2 0.7 0.6 b 0.35 0.20 b1 0.5 0.3 b2 0.50 0.35 b3 0.50 0.35 D 5.1 4.9 D1 3.2 3.0 E 5.1 4.9 E1 3.2 3.0 e 0.5 e1 4.2 e2 4.2 e3 4.15 e4 4.15 v 0.2 w 0.15 x 0.15 y 0.05 5 mm A1
OUTLINE VERSION SOT560-1
REFERENCES IEC JEDEC MO-217 JEITA
EUROPEAN PROJECTION
ISSUE DATE 00-02-01 03-03-12
2003 Mar 26
17
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
14 SOLDERING 14.1 Introduction to soldering surface mount packages
TZA3050
To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 14.4 Manual soldering
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 14.2 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferably be kept: * below 220 C for all the BGA packages and packages with a thickness 2.5mm and packages with a thickness <2.5 mm and a volume 350 mm3 so called thick/large packages * below 235 C for packages with a thickness <2.5 mm and a volume <350 mm3 so called small/thin packages. 14.3 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
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Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
14.5 Suitability of surface mount IC packages for wave and reflow soldering methods PACKAGE(1) BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS PLCC(4), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO, VSSOP Notes not suitable not suitable(3)
TZA3050
SOLDERING METHOD WAVE REFLOW(2) suitable suitable suitable suitable suitable
suitable not not recommended(4)(5) recommended(6)
1. For more detailed information on the BGA packages refer to the "(LF)BGA Application Note" (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
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19
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
15 DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
TZA3050
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 16 DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 17 DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
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Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
NOTES
TZA3050
2003 Mar 26
21
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
NOTES
TZA3050
2003 Mar 26
22
Philips Semiconductors
Product specification
30 Mbits/s up to 1.25 Gbits/s burst mode laser driver
NOTES
TZA3050
2003 Mar 26
23
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403510/02/pp24
Date of release: 2003
Mar 26
Document order number:
9397 750 11274

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